PART |
Description |
Maker |
ITT2206GJ |
3.6V 0.5W RF Power Amplifier IC for DECT
|
M/A-COM / Tyco Electronics
|
CGY196 |
Multiband Power Amplifier (DECT, PHS)
|
Infineon
|
SM1819-52LD |
1805 - 1880 MHz 160 Watt Power Amplifier
|
Stealth Microwave, Inc.
|
PH1819-45 PHL819-45 |
Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz Low Power Zero-Drift Operational Amplifier with Internal Capacitors; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C 无线双极功率晶体管,451805年至1880年兆 Wireless Bipolar Power Transistor/ 45W 1805 - 1880 MHz Low Power Zero-Drift Operational Amplifier with Internal Capacitors; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
|
Ecliptek, Corp. Tyco Electronics
|
PTF181301 PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆 LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
|
INFINEON[Infineon Technologies AG]
|
UAA3545 UAA3545HL UAA3545HL/C1 |
UAA3545; Fully integrated DECT transceiver Fully integrated DECT transceiver TELECOM, CORDLESS, RF AND BASEBAND CIRCUIT, PQFP32
|
Philips NXP Semiconductors N.V.
|
PH1819-90 |
Wireless Power Transistor 90 Watts/ 1805-1880 MHz Wireless Power Transistor 90 Watts, 1805-1880 MHz
|
MACOM[Tyco Electronics]
|
PXAC182002FC-V1 |
High Power RF LDMOS FET 180W, 28V, 1805 - 1880 MHz
|
Wolfspeed
|
PTFA181001GL09 |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805-1880 MHz
|
Infineon Technologies AG
|
PTFA182001E |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 - 1880 MHz
|
Infineon Technologies AG
|